es3f thru ES3G vishay semiconductors formerly general semiconductor document number 88590 www.vishay.com 02-jul-02 1 surface mount ultrafast plastic rectifier reverse voltage 300 to 400v forward current 3.0a reverse recovery time 35ns dimensions in inches and (millimeters) do-214ab (smc) 0.185 max. (4.69 max.) 0.121 min. (3.07 min.) 0.060 min. (1.52 min.) 0.320 ref mounting pad layout maximum ratings & thermal characteristics ratings at 25? ambient temperature unless otherwise specified. parameter symbol es3f ES3G unit device marking code ef eg maximum repetitive peak reverse voltage v rrm 300 400 v working peak reverse voltage v rwm 225 300 v maximum rms voltage v rms 210 280 v maximum dc blocking voltage v dc 300 400 v maximum average forward rectified current at t l = 110? i f(av) 3.0 a peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) at t l = 110? i fsm 100 a typical thermal resistance (1) r ja 50 r jl 15 ?/w operating junction and storage temperature range t j , t stg 55 to +150 ? electrical characteristics ratings at 25? ambient temperature unless otherwise specified. parameter symbol es3f ES3G unit maximum instantaneous forward voltage at 3.0a v f 1.1 v maximum dc reverse current t a = 25? 10 at working peak reverse voltage t a = 100? i r 350 a maximum reverse recovery time at i f = 0.5a, i r = 1.0a, i rr = 0.25a t rr 35 ns maximum reverse recovery time i f =1.0a, di/dt=100a/ s, v r =30v, i rr =0.1i rm t rr 50 ns maximum reverse recovery current i f =1.0a, di/dt=100a/ s, v r =30v, i rr =0.1i rm i rm 3.0 a maximum stored charge i f = 1.0a, di/dt = 100a/ s, v r = 30v, i rr = 0.1i rm q rr 50 nc typical junction capacitance at 4.0v, 1mhz c j 30 pf note : (1) units mounted on p.c.b. 5.0 x 5.0mm (0.013mm thick) land areas features ?plastic package has underwriters laboratories flammability classification 94v-0 ?ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes ?ultrafast recovery time for high efficiency ?excellent high temperature switching ?glass passivated junction ? high temperature soldering guaranteed: 250?/10 seconds, at terminals mechanical data case: jedec do-214ab molded plastic body over passivated chip terminals: solder plated, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end weight: 0.007 ounce, 0.21 gram 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.008 (0.203) max. 0.320 (8.13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.103 (2.62) 0.079 (2.06) cathode band
es3f thru ES3G vishay semiconductors formerly general semiconductor www.vishay.com document number 88590 2 02-jul-02 ratings and characteristic curves (t a = 25 c unless otherwise noted) 0 3.0 80 90 100 110 120 130 140 150 fig. 1 ?maximum forward current derating curve average forward rectified current (a) lead temperature ( c) 2.0 1.0 resistive or inductive load 1 10 100 0.1 fig. 6 - typical junction capacitance fig. 5 - reverse switching characteristics 0 25 50 75 100 125 150 1 100 10 fig. 2 ?maximum non-repetitive peak forward surge current peak forward surge current (a) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 instantaneous forward voltage (v) fig. 3 ?typical instantaneous forward characteristics 020 60 40 100 80 fig. 4 ?typical reverse leakage characteristics instantaneous reverse leakage current ( a) percent of rated peak reverse voltage (%) 0.01 0.1 10 100 instantaneous forward current (a) junction temperature, c reverse voltage (v) recovered stored charge/ reverse recovery time nc/ns 25 50 75 100 125 150 175 0.01 0.1 10 1 100 1,000 number of cycles at 60 h z 8.3ms single half sine-wave (jedec method) at t l = 110 c 1 80 40 120 160 200 0 10 1 100 junction capacitance, pf t j = 25 c pulse width = 300 s 1% duty cycle t j = 25 c t j = 100 c t j = 125 c @5a,50a/ s @2a,20a/ s @5a,50a/ s @2a,20a/ s @1a,100a/ s @1a,100a/ s trr qrr t j = 25 c f=1.0 mh z v sig =50mvp-p
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